Invention Grant
- Patent Title: Semiconductor device and electric power control apparatus
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Application No.: US15444876Application Date: 2017-02-28
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Publication No.: US10224921B2Publication Date: 2019-03-05
- Inventor: Ryo Kanda , Koichi Yamazaki , Hiroshi Kuroiwa , Masatoshi Maeda , Tetsu Toda
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-141219 20150715
- Main IPC: H03K17/082
- IPC: H03K17/082 ; H03K17/567 ; H03K5/01 ; H03K5/24 ; H03K3/356 ; H03K5/04 ; H01L27/092 ; H01L29/06 ; H01L29/40 ; H01L29/78 ; H01L23/528 ; H01L23/00

Abstract:
A driver IC includes a ring-shaped termination area, and a first area and a second area that are respectively arranged outside and inside the termination area on a layout. A sense MOS that is arranged between a floating terminal and a first sense node and is driven at a power supply voltage is formed in the termination area. A fault detection circuit that detects presence of a fault when a voltage of the first sense node is higher than a decision voltage that has been determined in advance in a period of time that a low side driver is driving a low side transistor into an ON state is formed in the first area.
Public/Granted literature
- US20170170819A1 SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONTROL APPARATUS Public/Granted day:2017-06-15
Information query
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