Invention Grant
- Patent Title: Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device
-
Application No.: US15455879Application Date: 2017-03-10
-
Publication No.: US10224200B2Publication Date: 2019-03-05
- Inventor: Gyu-hee Park , Jae-soon Lim , Youn-joung Cho , Myong-woon Kim , Sang-ick Lee , Sung-duck Lee , Sung-woo Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do KR Daejeon
- Assignee: Samsung Electronics Co., Ltd.,DNF Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.,DNF Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do KR Daejeon
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0118210 20160913
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C07F5/06 ; C09D1/00 ; C09D5/24 ; H01L21/311 ; H01L27/11582
Abstract:
An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.
Public/Granted literature
Information query
IPC分类:
