Invention Grant
- Patent Title: Semiconductor device using a parallel bit operation and method of operating the same
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Application No.: US15600715Application Date: 2017-05-20
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Publication No.: US10224114B2Publication Date: 2019-03-05
- Inventor: Je-min Ryu , Hak-soo Yu , Reum Oh , Seong-young Seo , Soo-jung Rho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2016-0068849 20160602
- Main IPC: G11C29/12
- IPC: G11C29/12 ; G11C5/00 ; G11C29/26 ; G11C29/54

Abstract:
A memory device may include a memory cell array including a plurality of memory cells, and an internal operation circuit configured to perform a test operation in a test mode using a parallel bit operation of simultaneously comparing a plurality of bits and also perform an internal operation including a comparison operation with respect to external data in a normal mode other than the test mode using the parallel bit operation.
Public/Granted literature
- US20170352434A1 SEMICONDUCTOR DEVICE USING A PARALLEL BIT OPERATION AND METHOD OF OPERATING THE SAME Public/Granted day:2017-12-07
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