A device manufacturing method includes forming, in a first layer, first line patterns of which longitudinal direction is a first direction; and forming, in a second layer above the first layer, second line patterns of which longitudinal direction is a second direction crossing the first direction, and third line patterns of which longitudinal direction is the second direction and having a etching characteristic different from an etching characteristic of the second line patterns. At least one edge portion of each of the second line patterns and at least one edge portion of each of the third line patterns are adjacent. As viewed from above the second layer, the adjacent at least one edge portions of one of the second and third line patterns are positioned between two adjacent line patterns of the first line pattern.