Invention Grant
- Patent Title: Current detection method of semiconductor device and semiconductor device
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Application No.: US15823217Application Date: 2017-11-27
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Publication No.: US10222403B2Publication Date: 2019-03-05
- Inventor: Osamu Soma , Akira Uemura , Kenji Amada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2015-082772 20150414
- Main IPC: G01R19/32
- IPC: G01R19/32 ; G01R1/20 ; G01R15/09

Abstract:
A control method of a semiconductor device includes inspecting an electrical property of a current detection circuit in the first semiconductor chip, writing information on a correction equation obtained on the basis of an inspection result in a memory circuit of the second semiconductor chip, and correcting, with the second semiconductor chip, a detection result obtained by the current detection circuit on the basis of the information on the correction equation.
Public/Granted literature
- US20180080963A1 CURRENT DETECTION METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2018-03-22
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