Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15252199Application Date: 2016-08-30
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Publication No.: US10205446B2Publication Date: 2019-02-12
- Inventor: Junichi Chisaka
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2016-051326 20160315
- Main IPC: H03K17/06
- IPC: H03K17/06 ; H03K17/082 ; H03K17/14

Abstract:
A semiconductor device includes a gate terminal, a ground terminal, a power-supply terminal, and a source terminal. The semiconductor device includes a first switch element having a gate and a source, the first switch element connected between the gate terminal and the source terminal, a second switch element connected between one of the gate of the first switch element and the source terminal or between the gate of the first switch element and the ground terminal and configured to switch the first switch element between turned-on and turned-off states, and a capacitor having one terminal thereof connected to the power-supply terminal and the ground terminal and another terminal thereof connected to the gate of the first switch element. Based on the potential state of the ground terminal and the state of the second switch element, the capacitor boosts the voltage of the gate of the first switch element.
Public/Granted literature
- US20170272069A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-09-21
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