Invention Grant
- Patent Title: Rectifier including MOSFET and hold circuit that boosts gate voltage of MOSFET, and alternator using the same
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Application No.: US15819315Application Date: 2017-11-21
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Publication No.: US10205314B2Publication Date: 2019-02-12
- Inventor: Tetsuya Ishimaru , Mutsuhiro Mori , Shinichi Kurita
- Applicant: Hitachi Power Semiconductor Device, Ltd.
- Applicant Address: JP Hitachi-shi
- Assignee: Hitachi Power Semiconductor Device, Ltd.
- Current Assignee: Hitachi Power Semiconductor Device, Ltd.
- Current Assignee Address: JP Hitachi-shi
- Agency: Crowell & Moring LLP
- Priority: JP2016-229656 20161128
- Main IPC: H02H7/06
- IPC: H02H7/06 ; H02M3/335 ; H02M7/219 ; H02J7/14 ; H02K11/04 ; H02M1/08 ; H02M7/217

Abstract:
A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.
Public/Granted literature
- US20180191152A1 Rectifier and Alternator Using the Same Public/Granted day:2018-07-05
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