Invention Grant
- Patent Title: Light emitting diode having carbon nanotubes
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Application No.: US15636584Application Date: 2017-06-28
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Publication No.: US10205056B2Publication Date: 2019-02-12
- Inventor: Qun-Qing Li , Kai-Li Jiang , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN200810217913 20081128
- Main IPC: H01L33/38
- IPC: H01L33/38 ; B82Y20/00 ; H01L33/42 ; H01L33/12 ; H01L33/20 ; H01L33/46 ; H01L33/10 ; H01L33/16 ; H01L33/40 ; B82Y30/00 ; H01L51/00 ; B82Y40/00 ; H01L29/06 ; H01L33/06 ; H01L33/32

Abstract:
A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a second electrode, a static electrode and a carbon nanotube structure. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the substrate. The first electrode is located on and electrically connected to the first semiconductor layer. The carbon nanotube structure is located on and electrically connected to the second semiconductor layer. The second electrode is located on and electrically connected to the carbon nanotube structure. The static electrode is located between the second semiconductor layer and the carbon nanotube structure. The carbon nanotube structure includes a first portion in direct contact with the second semiconductor layer and a second portion sandwiched between the static electrode and the second electrode.
Public/Granted literature
- US20170301827A1 LIGHT EMITTING DIODE HAVING CARBON NANOTUBES Public/Granted day:2017-10-19
Information query
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