Invention Grant
- Patent Title: Semiconductor structure having field plate and associated fabricating method
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Application No.: US15017225Application Date: 2016-02-05
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Publication No.: US10205024B2Publication Date: 2019-02-12
- Inventor: Chih-Chang Cheng , Fu-Yu Chu , Ruey-Hsin Liu , Kuang-Hsin Chen , Chih-Hsin Ko , Shih-Fen Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C. Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/40 ; H01L29/417
Abstract:
A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a gate structure formed over the substrate; a source region and a drain region formed in the substrate on either side of the gate structure, the source region and the drain region both having a first type of conductivity; and a field plate formed over the substrate between the gate structure and the drain region; wherein the field plate is coupled to the source region or a bulk electrode of the substrate. An associated method for fabricating the semiconductor structure is also disclosed.
Public/Granted literature
- US20170229570A1 SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD Public/Granted day:2017-08-10
Information query
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