A power semiconductor device includes: a semiconductor body for conducting a load current between first and second load terminals; source and channel regions and a drift volume in the semiconductor body; a semiconductor zone in the semiconductor body and coupling the drift volume to the second load terminal, a first transition established between the semiconductor zone and the drift volume; a control electrode insulated from the semiconductor body and the load terminals and configured to control a path of the load current in the channel region; and a trench extending into the drift volume along an extension direction and including a field electrode. An ohmic resistance of the field electrode is greater than an ohmic resistance of the control electrode. A distance between the field electrode and the first transition is at least 70% of the total extension of the drift volume in the extension direction.