- Patent Title: Method for removing damaged layer embedded in a dielectric layer
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Application No.: US15893711Application Date: 2018-02-12
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Publication No.: US10204826B1Publication Date: 2019-02-12
- Inventor: Min-Shiang Hsu , Yuan-Fu Ko , Chih-Sheng Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201810048650 20180118
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L23/522 ; H01L21/8234 ; H01L23/532 ; H01L23/528 ; H01L21/311 ; H01L21/321
Abstract:
A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a trench in the IMD layer; performing a treatment process to transform part of the IMD layer into a damaged layer adjacent to the trench; forming a protective layer on a sidewall of the damaged layer; forming a metal layer in the trench; and removing the damaged layer to form an air gap adjacent to the protective layer.
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