Invention Grant
- Patent Title: Memory device with strap cells
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Application No.: US15831332Application Date: 2017-12-04
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Publication No.: US10204660B2Publication Date: 2019-02-12
- Inventor: Jonathan Tsung-Yung Chang , Cheng-Hung Lee , Chi-Ting Cheng , Hung-Jen Liao , Jhon-Jhy Liaw , Yen-Huei Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/14 ; G11C7/10 ; G11C7/12 ; G11C11/417 ; G11C7/22

Abstract:
A device includes a memory array including a first sub-bank, a second sub-bank, a first strap cell and a data line. The first strap cell is arranged between the first sub-bank and the second sub-bank. The data line includes a first portion and a second portion. The first portion is arranged across the first sub-bank. The second portion is arranged across the second sub-bank, and is coupled to the first portion via the first strap cell.
Public/Granted literature
- US20180096710A1 MEMORY DEVICE WITH STRAP CELLS Public/Granted day:2018-04-05
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