Invention Grant
- Patent Title: Optical sensor and solid-state imaging device, and signal reading methods therefor
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Application No.: US15524701Application Date: 2015-11-16
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Publication No.: US10200641B2Publication Date: 2019-02-05
- Inventor: Shigetoshi Sugawa , Rihito Kuroda , Shunichi Wakashima
- Applicant: TOHOKU UNIVERSITY
- Applicant Address: JP Sendai, Miyagi
- Assignee: TOHOKU UNIVERSITY
- Current Assignee: TOHOKU UNIVERSITY
- Current Assignee Address: JP Sendai, Miyagi
- Agency: Venable LLP
- Priority: JP2014-233172 20141117
- International Application: PCT/JP2015/082089 WO 20151116
- International Announcement: WO2016/080337 WO 20160526
- Main IPC: H04N5/355
- IPC: H04N5/355 ; H01L21/8234 ; H01L29/78 ; H01L27/088 ; H04N5/374 ; H01L27/146 ; H01L49/02 ; H04N5/3745 ; H04N5/378 ; H04N5/357

Abstract:
One problem addressed by the present invention is to provide an optical sensor, a solid-state imaging device, and methods for reading the signals therefrom, which contribute greatly to the development of industry and the realization of a safer and more secure society. One solution according to the present invention is an optical sensor having a light-receiving element, storage capacitors that store a charge, and a transfer switch for transferring to the storage capacitors a charge generated by light input to the light-receiving element, wherein the storage capacitors are a floating diffusion capacitor and a lateral overflow integration capacitor, and the transfer switch is a non-LDD/MOS transistor, that is, a non-LDD/MOS transistor for which the impurity concentration of the drain region is reduced by 50%.
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