Invention Grant
- Patent Title: Image sensor device
-
Application No.: US16053064Application Date: 2018-08-02
-
Publication No.: US10200640B2Publication Date: 2019-02-05
- Inventor: Osamu Nishikido
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electroncis Corporation
- Current Assignee: Renesas Electroncis Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn I.P. Law Group, PLLC
- Priority: JP2015-177575 20150909
- Main IPC: H04N5/355
- IPC: H04N5/355 ; H04N9/04 ; H04N5/3745

Abstract:
An image sensor device includes a plurality of pixel cells arranged in a matrix in a pixel array, and a timing control circuit that controls read-out of pixel information from the plurality of pixel cells. Each of the plurality of pixel cells includes a photodiode, a transfer transistor provided between the photodiode and a floating diffusion, a node reset transistor provided between a power supply terminal and the floating diffusion, a read-out capacitor whose one end is connected to the power supply terminal, a capacitor reset transistor provided between another end of the read-out capacitor and the floating diffusion, an amplification transistor that amplifies a voltage generated based on electric charges accumulated in the floating diffusion, and a selection transistor provided between the amplification transistor and a read-out line.
Public/Granted literature
- US20180343405A1 IMAGE SENSOR DEVICE Public/Granted day:2018-11-29
Information query