Invention Grant
- Patent Title: IO interface level shift circuit, IO interface level shift method and storage medium
-
Application No.: US15519241Application Date: 2015-04-14
-
Publication No.: US10200042B2Publication Date: 2019-02-05
- Inventor: Hailiang Cui
- Applicant: SANECHIPS TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Sanechips Technology Co. Ltd.
- Current Assignee: Sanechips Technology Co. Ltd.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agency: Cooper Legal Group, LLC
- Priority: CN201410549552 20141016
- International Application: PCT/CN2015/076527 WO 20150414
- International Announcement: WO2016/058343 WO 20160421
- Main IPC: H03K19/0185
- IPC: H03K19/0185 ; H03K19/0175 ; H03K3/356

Abstract:
Provided is an IO interface level shift circuit, comprising: an intermediate level generation circuit (11) and a level shift circuit (12). The intermediate level generation circuit is configured to provide an intermediate level Vdd_io of an IO interface. The level shift circuit is configured to convert an external logical signal into a signal in an internal power domain of a chip according to the intermediate level Vdd_io of the IO interface. Also provided are an IO interface level shift method and a storage medium. The interface level shift circuit enables level shift on an external IO signal at any level in a voltage withstanding domain of a device without adding a power domain suitable for an external IO level in the circuit.
Public/Granted literature
- US20170222650A1 IO INTERFACE LEVEL SHIFT CIRCUIT, IO INTERFACE LEVEL SHIFT METHOD AND STORAGE MEDIUM Public/Granted day:2017-08-03
Information query
IPC分类: