Invention Grant
- Patent Title: Radio frequency switch apparatus with integrated shunt and bias
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Application No.: US15877774Application Date: 2018-01-23
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Publication No.: US10200027B1Publication Date: 2019-02-05
- Inventor: Jeong Hoon Kim , Hyun Paek , Byeong Hak Jo
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2017-0099144 20170804
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/16 ; H04B1/40

Abstract:
A radio frequency (RF) switch apparatus includes a first series switch circuit including a first series switch disposed between a first terminal and a second terminal and operating in response to a first gate signal, and a first capacitor circuit and a second capacitor circuit connected across the first series switch; a first shunt-bias circuit disposed between a first connection node between the first terminal and the first series switch, and a ground, and providing a power voltage or a ground potential to the first connection node in response to a second gate signal; and a first shunt-impedance circuit connected between the first connection node and the first shunt-bias circuit and adjusting path impedance in response to a third gate signal. Each of the first capacitor circuit and the second capacitor circuit passes an alternating current (AC) signal or blocks a direct current (DC) voltage.
Public/Granted literature
- US20190044509A1 RADIO FREQUENCY SWITCH APPARATUS WITH INTEGRATED SHUNT AND BIAS Public/Granted day:2019-02-07
Information query
IPC分类: