Invention Grant
- Patent Title: Method of forming a semiconductor device
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Application No.: US16029917Application Date: 2018-07-09
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Publication No.: US10199918B2Publication Date: 2019-02-05
- Inventor: Martin Podzemny , Vaclav Peroutka
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H02M3/335
- IPC: H02M3/335 ; H02M1/08 ; H02M1/15 ; H02M1/00

Abstract:
In one embodiment, a controller for a power supply may be configured to operate as a quasi-resonant controller while operating in a discontinuous current mode and to operate as one of a pulse width or pulse frequency modulation controller while operating in a continuous current mode. The controller may have an embodiment that varies a frequency of the switching drive signal around a center frequency while operating in the continuous current mode, and varies a value of a current sense signal but not vary the frequency of the switching drive signal around a center frequency while operating in the discontinuous current mode.
Public/Granted literature
- US20190013726A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE Public/Granted day:2019-01-10
Information query
IPC分类: