Invention Grant
- Patent Title: Vertical transistor with improved robustness
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Application No.: US15227578Application Date: 2016-08-03
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Publication No.: US10199491B2Publication Date: 2019-02-05
- Inventor: Rainald Sander , Markus Winkler , Michael Asam , Matthias Stecher
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
- Current Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
- Current Assignee Address: AT Villach
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/10 ; H01L29/06
Abstract:
A transistor is disclosed that includes a semiconductor body having a first horizontal surface. A drift region is arranged in the semiconductor body. A plurality of gate electrodes is arranged in trenches of the semiconductor body. The trenches have a longitudinal direction and extending parallel relative to each other. The longitudinal direction of the trenches extends in a first lateral direction of the semiconductor body. The body regions and the source regions are arranged between the trenches. The body regions are arranged between the drift region and the source regions in a vertical direction of the semiconductor body. In the first horizontal surface, the source regions and the body regions are arranged alternately in the first lateral direction. A source electrode is electrically connected to the source regions and the body regions in the first horizontal surface.
Public/Granted literature
- US20160343850A1 Vertical Transistor with Improved Robustness Public/Granted day:2016-11-24
Information query
IPC分类:
