An improvement is achieved in the performance of a semiconductor device. The semiconductor device includes a first trench gate electrode and second and third trench gate electrodes located on both sides of the first trench gate electrode interposed therebetween. In each of a semiconductor layer located between the first and second trench gate electrodes and the semiconductor layer located between the first and third trench gate electrodes, a plurality of p+-type semiconductor regions are formed. The p+-type semiconductor regions are arranged along the extending direction of the first trench gate electrode in plan view to be spaced apart from each other.