Invention Grant
- Patent Title: Complementary gallium nitride integrated circuits
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Application No.: US15985629Application Date: 2018-05-21
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Publication No.: US10199477B2Publication Date: 2019-02-05
- Inventor: Philippe Renaud
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Agent Sherry W. Schumm
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L29/66 ; H01L21/266 ; H01L21/761 ; H01L21/762 ; H01L21/8252 ; H01L27/06 ; H01L27/085 ; H01L29/778 ; H01L29/20 ; H01L21/265 ; H01L27/092
Abstract:
An embodiment of a complementary GaN integrated circuit includes a GaN layer with a first bandgap. A second layer with a second bandgap is formed on the GaN layer, resulting in a 2DEG in a contact region between the GaN layer and the second layer. The second layer has a relatively thin portion and a relatively thick portion. A third layer is formed over the relatively thick portion of the second layer. The third layer has a third bandgap that is different from the second bandgap, resulting in a 2DHG in a contact region between the second layer and the third layer. A transistor of a first conductivity type includes the 2DHG, the relatively thick portion of the second layer, and the third layer, and a transistor of a second conductivity type includes the 2DEG and the relatively thin portion of the second layer.
Public/Granted literature
- US20180277651A1 COMPLEMENTARY GALLIUM NITRIDE INTEGRATED CIRCUITS Public/Granted day:2018-09-27
Information query
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