Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a first portion of a variable resistance element, the first portion having an island shape and including at least a free layer which has a variable magnetization direction; a second portion of the variable resistance element, the second portion having a line shape which extends in a direction over the first portion and including at least a pinned layer which has a pinned magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer.