Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15797547Application Date: 2017-10-30
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Publication No.: US10199425B2Publication Date: 2019-02-05
- Inventor: Hiroyuki Momono
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-258646 20121127
- Main IPC: H01L27/00
- IPC: H01L27/00 ; G06F17/50 ; H01L27/146 ; H01L21/66

Abstract:
A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region.
Public/Granted literature
- US20180053807A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-02-22
Information query
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