Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15317094Application Date: 2014-07-09
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Publication No.: US10199422B2Publication Date: 2019-02-05
- Inventor: Yasuhiro Araki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn I.P. Law Group, PLLC.
- International Application: PCT/JP2014/068288 WO 20140709
- International Announcement: WO2016/006052 WO 20160114
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/374 ; H04N5/3745

Abstract:
A plurality of pixel regions are aligned in a matrix in a semiconductor substrate, and each of the plurality of pixel regions includes an active region, two photoelectric conversion elements, two floating capacitance regions, and a first transistor. Each of the plurality of pixel regions includes two transfer transistors each having each of the two photoelectric conversion elements and each of the two floating capacitance regions. The first transistor is arranged within the pixel region, between one floating capacitance region and the other floating capacitance region of the two floating capacitance regions with respect to a direction in which the one floating capacitance region and the other floating capacitance region are aligned.
Public/Granted literature
- US20170110499A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-04-20
Information query
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