Invention Grant
- Patent Title: Semiconductor photodetection device
-
Application No.: US14766336Application Date: 2013-10-17
-
Publication No.: US10199418B2Publication Date: 2019-02-05
- Inventor: Kenichi Sugimoto , Hiroya Kobayashi , Kentaro Maeta , Masaharu Muramatsu
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2013-039333 20130228
- International Application: PCT/JP2013/078221 WO 20131017
- International Announcement: WO2014/132482 WO 20140904
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L23/00 ; H01L23/498

Abstract:
A plurality of semiconductor photodetecting elements have a planar shape having a pair of first sides opposed to each other in a first direction and a pair of second sides being shorter than the pair of first sides and opposed to each other in a second direction perpendicular to the first direction, and are disposed on a base so as to be adjacent to each other in juxtaposition. A plurality of bump electrodes each are disposed on sides where the pair of first sides lie in each semiconductor photodetecting element, to electrically and mechanically connect the base to each semiconductor photodetecting element. A plurality of dummy bumps are disposed so that at least one dummy bump is disposed on each of sides where the pair of second sides lie in each semiconductor photodetecting element, to mechanically connect the base to each semiconductor photodetecting element.
Public/Granted literature
- US20150380455A1 SEMICONDUCTOR PHOTODETECTION DEVICE Public/Granted day:2015-12-31
Information query
IPC分类: