Invention Grant
- Patent Title: Semiconductor memory device including output buffer
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Application No.: US15600526Application Date: 2017-05-19
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Publication No.: US10199363B2Publication Date: 2019-02-05
- Inventor: Wataru Tsukada , Masayuki Honda , Yoshihisa Fukushima , Scott Richard Cyr
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2014-175787 20140829
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L25/18 ; H01L25/065 ; G11C5/04 ; G11C5/06 ; G11C29/02 ; G11C29/50 ; G11C7/10
Abstract:
A semiconductor module includes a module substrate, a line pattern provided to the module substrate, first and second semiconductor chips on the module substrate and coupled to the line pattern, and a termination resister on the module substrate and coupled to the line pattern, the termination resistor being located between the first and second semiconductor chips.
Public/Granted literature
- US20170256527A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING OUTPUT BUFFER Public/Granted day:2017-09-07
Information query
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