Invention Grant
- Patent Title: Semiconductor devices including stacked semiconductor chips
-
Application No.: US15358579Application Date: 2016-11-22
-
Publication No.: US10199355B2Publication Date: 2019-02-05
- Inventor: Donghyun Kim , DooWon Kwon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0167590 20151127
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L27/146 ; F01P7/04 ; F01P11/20

Abstract:
A semiconductor device includes a chip stack structure including a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first semiconductor chip includes a first substrate, a first circuit layer on a front surface of the first substrate, and a first connecting layer disposed on the first circuit layer and including a first metal pad electrically connected to the first circuit layer. The second semiconductor chip includes a second substrate, a second circuit layer on a front surface of the second substrate, and a second connecting layer disposed on the second circuit layer and including a second metal pad electrically connected to the second circuit layer. The first connecting layer faces the second connecting layer. The first and second metal pads are in contact with each other to couple the first and second semiconductor chips to each other.
Public/Granted literature
- US20170154873A1 Semiconductor Devices Including Stacked Semiconductor Chips Public/Granted day:2017-06-01
Information query
IPC分类: