Invention Grant
- Patent Title: Substrate structure
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Application No.: US15224767Application Date: 2016-08-01
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Publication No.: US10199341B2Publication Date: 2019-02-05
- Inventor: Fang-Yu Liang , Hung-Hsien Chang , Yi-Che Lai , Wen-Tsung Tseng , Chen-Yu Huang
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW105113075A 20160427
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
Provided is a substrate structure, including: a substrate body having a conductive contact; an insulating layer formed on the substrate body with the conductive contact exposed therefrom; and an insulating protection layer formed on a portion of a surface of the insulating layer, and having a plurality of openings corresponding to the conductive contact, wherein at least one of the openings is disposed at an outer periphery of the conductive contact. Accordingly, the insulating protection layer uses the openings to dissipate and disperse residual stresses in a manufacturing process of high operating temperatures.
Public/Granted literature
- US20170317040A1 SUBSTRATE STRUCTURE Public/Granted day:2017-11-02
Information query
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