Invention Grant
- Patent Title: Signal transmission insulative device and power semiconductor module
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Application No.: US15509126Application Date: 2015-08-19
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Publication No.: US10199340B2Publication Date: 2019-02-05
- Inventor: Kenichi Suga , Takao Tsurimoto , Hiroki Shiota , Kenichi Morokuma , Shoichi Orita , Fumitaka Tametani , Takahiro Inoue , Shiori Uota
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-233376 20141118
- International Application: PCT/JP2015/073229 WO 20150819
- International Announcement: WO2016/080034 WO 20160526
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01F27/32 ; H01L23/00 ; G11C11/34 ; H01L23/373 ; H01L25/16 ; H04L1/00 ; H05K7/14 ; H01F27/28 ; H01L23/62 ; H01L25/18

Abstract:
A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.
Public/Granted literature
- US20170278811A1 SIGNAL TRANSMISSION INSULATIVE DEVICE AND POWER SEMICONDUCTOR MODULE Public/Granted day:2017-09-28
Information query
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