Invention Grant
- Patent Title: Conductive structure and method for manufacturing conductive structure
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Application No.: US15361503Application Date: 2016-11-28
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Publication No.: US10199269B2Publication Date: 2019-02-05
- Inventor: Li-Han Chen , Yen-Tsai Yi , Chun-Chieh Chiu , Min-Chuan Tsai , Wei-Chuan Tsai , Hsin-Fu Huang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L23/485
- IPC: H01L23/485 ; H01L21/768 ; H01L23/535 ; H01L23/532 ; H01L29/08 ; H01L29/161 ; H01L29/16 ; H01L29/165 ; H01L29/24 ; H01L29/267 ; H01L29/78
Abstract:
A conductive structure includes a substrate including a first dielectric layer formed thereon, at least a first opening formed in the first dielectric layer, a low resistive layer formed in the opening, and a first metal bulk formed on the lower resistive layer in the opening. The first metal bulk directly contacts a surface of the first low resistive layer. The low resistive layer includes a carbonitride of a first metal material, and the first metal bulk includes the first metal material.
Public/Granted literature
- US20180151428A1 CONDUCTIVE STRUCTURE AND METHOD FOR MANUFACTURING CONDUCTIVE STRUCTURE Public/Granted day:2018-05-31
Information query
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