Invention Grant
- Patent Title: Thermal pad for etch rate uniformity
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Application No.: US15726103Application Date: 2017-10-05
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Publication No.: US10199252B2Publication Date: 2019-02-05
- Inventor: Chin-Huei Chiu , Tsung Fan Yin , Chen-Yi Liu , Hua-Li Hung , Xi-Zong Chen , Yi-Wei Chiu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/67 ; H01L21/3213 ; H01L21/311 ; H01L29/66 ; H01L21/3065

Abstract:
Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.
Public/Granted literature
- US20190006220A1 Thermal Pad for Etch Rate Uniformity Public/Granted day:2019-01-03
Information query
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