Invention Grant
- Patent Title: Temperature control mechanism, temperature control method and substrate processing apparatus
-
Application No.: US15021326Application Date: 2014-10-16
-
Publication No.: US10199246B2Publication Date: 2019-02-05
- Inventor: Katsuyuki Koizumi , Shigeru Senzaki , Tomoyuki Takahashi , Dai Kitagawa
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2013-221773 20131025
- International Application: PCT/JP2014/077524 WO 20141016
- International Announcement: WO2015/060185 WO 20150430
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/683 ; F27B5/14 ; F27B5/18 ; F27D11/02 ; H01L21/67 ; F27B17/00 ; F27D19/00
Abstract:
There is provided a temperature control mechanism comprising: a plurality of combinations of a heater and a thyristor, wherein at least one combination of the heater and the thyristor is provided on a zone-by-zone basis, and wherein an area of an electrostatic chuck for mounting a substrate is divided into a plurality of zones; a power supply configured to supply current to heaters of the plurality of combinations respectively through the thyristors of the plurality of combinations; a pair of filters disposed at a power supply line for supplying electric power from the power supply to the heaters and configured to eliminate high frequency power applied to the power supply.
Public/Granted literature
- US20160225645A1 TEMPERATURE CONTROL MECHANISM, TEMPERATURE CONTROL METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2016-08-04
Information query
IPC分类:
