Invention Grant
- Patent Title: Conductor line structure
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Application No.: US13033696Application Date: 2011-02-24
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Publication No.: US10199232B2Publication Date: 2019-02-05
- Inventor: Shin-Chi Chen , Jiunn-Hsiung Liao , Yu-Tsung Lai
- Applicant: Shin-Chi Chen , Jiunn-Hsiung Liao , Yu-Tsung Lai
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORPORATION
- Current Assignee: UNITED MICROELECTRONICS CORPORATION
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L21/311 ; H01L21/768

Abstract:
Exemplary metal line structure and manufacturing method for a trench are provided. In particular, the metal line structure includes a substrate, a target layer, a trench and a conductor line. The target layer is formed on the substrate. The trench is formed in the target layer and has a micro-trench formed at the bottom thereof. A depth of the micro-trench is not more than 50 angstroms. The conductor line is inlaid into the trench.
Public/Granted literature
- US20120217552A1 METAL LINE STRUCTURE AND MANUFACTURING METHOD FOR TRENCH Public/Granted day:2012-08-30
Information query
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