Invention Grant
- Patent Title: Manufacturing method of metal gate structure
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Application No.: US15479292Application Date: 2017-04-05
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Publication No.: US10199228B2Publication Date: 2019-02-05
- Inventor: Nien-Ting Ho , Chien-Hao Chen , Hsin-Fu Huang , Chi-Yuan Sun , Wei-Yu Chen , Min-Chuan Tsai , Tsun-Min Cheng , Chi-Mao Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/28 ; H01L29/49 ; H01L21/8238 ; H01L29/51 ; H01L29/66 ; H01L29/78 ; H01L29/165
Abstract:
A manufacturing method of a metal gate structure includes the following steps. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function layer is formed on the gate dielectric layer in the gate trench. The silicon-containing work function layer includes a vertical portion and a horizontal portion. Finally, the gate trench is filled up with a conductive metal layer.
Public/Granted literature
- US20170207093A1 MANUFACTURING METHOD OF METAL GATE STRUCTURE Public/Granted day:2017-07-20
Information query
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