Invention Grant
- Patent Title: Thin film type capacitor element and method of manufacturing the same
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Application No.: US15450568Application Date: 2017-03-06
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Publication No.: US10199171B2Publication Date: 2019-02-05
- Inventor: Jong Bong Lim , Hai Joon Lee , Doo Young Kim , Chang Hoon Kim
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2014-0078367 20140625
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G4/30 ; H01G4/012 ; H01G4/12 ; H01G4/232 ; H01G4/06
Abstract:
Disclosed herein is a thin film type capacitor element, including: a body part formed by stacking a plurality of dielectric layers; a first internal electrode provided in the body part and including a first non-plated region; a second internal electrode including a second non-plated region; a first via formed in the first non-plated region; and a second via formed in the second non-plated region.
Public/Granted literature
- US20170200559A1 THIN FILM TYPE CAPACITOR ELEMENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-07-13
Information query
