A flash memory device includes an array of non-volatile memory (NVM) cells, at least one detection NVM cell, and a sensing circuit. The array of NVM cells are configured to store data. The sensing circuit is coupled to the at least one detection NVM cell and is configured to measure a charge on the at least one detection NVM cell. The sensing circuit is also configured to compare the measured charge with a threshold charge level and to trigger a refresh of the array of NVM cells in response to the measured charge being less than the threshold charge level.