Invention Grant
- Patent Title: Light emitting hybrid semiconductors based on IB-VII binary compounds
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Application No.: US14896870Application Date: 2014-06-13
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Publication No.: US10177325B2Publication Date: 2019-01-08
- Inventor: Jing Li , Xiao Zhang , George Z. Wei , Wei Liu
- Applicant: Rutgers, The State University of New Jersey
- Applicant Address: US NJ New Brunswick
- Assignee: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
- Current Assignee: RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY
- Current Assignee Address: US NJ New Brunswick
- Agency: Fox Rothschild LLP
- International Application: PCT/US2014/042340 WO 20140613
- International Announcement: WO2014/201377 WO 20141218
- Main IPC: C09K11/00
- IPC: C09K11/00 ; C09K11/58 ; H01L33/26 ; H01L51/00 ; C07F1/10 ; H01L33/50 ; C07F1/12 ; C09K11/06 ; C07F1/08 ; H01L51/50

Abstract:
Inorganic-organic hybrid IB-VII semiconductor compounds, in which a Group IB transition metal halide salt is coordinated with an organic heteroaromatic ligand, wherein at least one ring atom of said heteroaromatic ligand is a heteroatom independently selected from N, O and S and the Group IB metal of the halide salt is coordinated to a ring heteroatom. Also disclosed are semiconductor and light emitting devices comprising these materials, including light emitting diodes, and methods of preparing these materials and devices.
Public/Granted literature
- US20160133839A1 Light Emitting Hybrid Semiconductors Based on IB-VII Binary Compounds Public/Granted day:2016-05-12
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