There is provided a Group III nitride semiconductor light-emitting device exhibiting improved crystallinity while suppressing abnormal growth of semiconductor layer due to pits and a production method therefor. In forming an n-side electrostatic breakdown preventing layer, pits are generated from the n-side electrostatic breakdown preventing layer. In forming an n-side superlattice layer, the layer is formed by alternately depositing a first InGaN layer and a GaN layer having an In composition ratio lower than that of the first InGaN layer, so that the In composition ratio and the total thickness of the first InGaN layers satisfy the following equation: 0