Invention Grant
- Patent Title: Photodetector
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Application No.: US15449638Application Date: 2017-03-03
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Publication No.: US10177267B2Publication Date: 2019-01-08
- Inventor: Jianping Zhang , Ling Zhou , Ying Gao
- Applicant: BOLB INC.
- Applicant Address: US CA San Jose
- Assignee: BOLB INC.
- Current Assignee: BOLB INC.
- Current Assignee Address: US CA San Jose
- Agency: J.C. Patents
- Main IPC: H01L31/112
- IPC: H01L31/112 ; H01L31/0304 ; H01L31/107 ; H01L31/0224 ; H01L31/18

Abstract:
An UV photodetector includes: a substrate, a template layer formed on the substrate, an intrinsic AlGaN layer formed on the template layer, a first n-type AlGaN layer and a second n-type AlGaN layer formed on the intrinsic AlGaN layer side-by-side and separated by a gap, wherein the gap exposes the intrinsic AlGaN layer. Another UV photodetector includes: an UV transparent substrate, an UV transparent template layer formed on the substrate, a first UV transparent n-type AlGaN layer formed on the UV transparent template layer, an intrinsic AlGaN layer formed on the first UV transparent n-type AlGaN layer, a second n-type AlGaN layer formed on the intrinsic AlGaN layer, and a p-type layer formed on the second n-type AlGaN layer.
Public/Granted literature
- US20180254371A1 PHOTODETECTOR Public/Granted day:2018-09-06
Information query
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