A method for fabricating a semiconductor structure includes providing a substrate including a device region, an isolation region, and a transition region between the device region and the isolation region, forming a plurality of fin structures on the device region of the substrate, forming a plurality of dummy fin structures on the transition region of the substrate, and forming an isolation structure on the device region, the isolation region, and the transition region of the substrate. The isolation structure further covers a portion of sidewall surfaces of the fin structures and the dummy fin structures. Moreover, the method includes forming a plurality of semiconductor devices on the fin structures in the device region after forming the isolation structure.