Invention Grant
- Patent Title: Advanced E-fuse structure with controlled microstructure
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Application No.: US15424088Application Date: 2017-02-03
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Publication No.: US10177089B2Publication Date: 2019-01-08
- Inventor: Daniel C Edelstein , Chih-Chao Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Jeffrey S LaBaw; Steven J Meyers
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L23/528 ; H01L23/532

Abstract:
An advanced e-Fuse structure is described. An e-Fuse device includes an anode region, a cathode region and a fuse element which interconnects the anode and cathode regions in a dielectric material on a first surface of a substrate. The fuse element has a smaller cross section and a higher aspect ratio than the anode and cathode regions. The anode and cathode regions are comprised of a large grained copper structure and the fuse element is comprised of a fine grained copper structure.
Public/Granted literature
- US20170278795A1 ADVANCED E-FUSE STRUCTURE WITH CONTROLLED MICROSTRUCTURE Public/Granted day:2017-09-28
Information query
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