Invention Grant
- Patent Title: Semiconductor module and method of manufacturing semiconductor module
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Application No.: US15534686Application Date: 2015-11-06
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Publication No.: US10177084B2Publication Date: 2019-01-08
- Inventor: Nobutake Tsuyuno , Eiichi Ide
- Applicant: HITACHI, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI, LTD.
- Current Assignee: HITACHI, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2014-251516 20141212
- International Application: PCT/JP2015/081247 WO 20151106
- International Announcement: WO2016/092994 WO 20160616
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/48 ; H01L25/07 ; H01L25/18 ; H01L23/00 ; H01L29/739
Abstract:
An object of the invention is to manufacture a semiconductor module small. A metal wire (212) connecting a control electrode (101) and a control terminal (21) rises to form a first angle (θ1) from the control electrode (101) toward a first conductive portion (202), gradually goes in substantially parallel to the first conductive portion (202) as the metal wire approaches the first conductive portion (202), and is connected to the control terminal (21) to form a second angle (θ2) smaller than the first angle (θ1).
Public/Granted literature
- US20170338176A1 SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING SEMICONDUCTOR MODULE Public/Granted day:2017-11-23
Information query
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