Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14620317Application Date: 2015-02-12
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Publication No.: US10177061B2Publication Date: 2019-01-08
- Inventor: Gerhard Prechtl , Clemens Ostermaier , Oliver Haeberlen
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L23/31 ; H01L29/423 ; H01L29/51 ; H01L29/778 ; H01L29/10 ; H01L29/20 ; H01L29/207
Abstract:
In an embodiment, a semiconductor device includes a substrate, a Group III nitride-based semiconductor layer formed on the substrate, a first current electrode and a second current electrode formed on the Group III nitride-based semiconductor layer and spaced from each other, and a control electrode formed on the Group III nitride-based semiconductor layer between the first current electrode and the second current electrode. The control electrode includes at least a middle portion, configured to switch off a channel below the middle portion when a first voltage is applied to the control electrode, and second portions adjoining the middle portion. The second portions are configured to switch off a channel below the second portions when a second voltage is applied to the control electrode, the second voltage being less than the first voltage and the second voltage being less than a threshold voltage of the second portions.
Public/Granted literature
- US20160240645A1 Semiconductor Device Public/Granted day:2016-08-18
Information query
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