- Patent Title: Independent control of branch FETs for RF performance improvement
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Application No.: US15618584Application Date: 2017-06-09
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Publication No.: US10171076B2Publication Date: 2019-01-01
- Inventor: Michael Conry , Kevin Roberts , Edward Nicholas Comfoltey
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent Martin J. Jaquez, Esq.; John Land, Esq.
- Main IPC: H03K17/693
- IPC: H03K17/693 ; H04B1/48 ; H04B1/44

Abstract:
A FET-based RF switch architecture and method that provides for independent control of FETs within component branches of a switching circuit. With independent control of branch FETs, every RF FET in an inactive branch that is in an “open” (capacitive) state can be shunted to RF ground and thus mitigate impedance mismatch effects. Providing a sufficiently low impedance to RF ground diminishes such negative effects and reduces the sensitivity of the switch circuit to non-matched impedances.
Public/Granted literature
- US20170346486A1 Independent Control of Branch FETs for RF Performance Improvement Public/Granted day:2017-11-30
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