Invention Grant
- Patent Title: TFT substrate, scanning antenna using same, and method for manufacturing TFT substrate
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Application No.: US15542488Application Date: 2016-10-06
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Publication No.: US10170826B2Publication Date: 2019-01-01
- Inventor: Makoto Nakazawa , Takatoshi Orui , Shigeyasu Mori , Fumiki Nakano , Kiyoshi Minoura
- Applicant: Sharp Kabushiki Kaisha
- Applicant Address: JP Sakai
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai
- Agency: Keating & Bennett, LLP
- Priority: JP2015-201172 20151009
- International Application: PCT/JP2016/079735 WO 20161006
- International Announcement: WO2017/061527 WO 20170413
- Main IPC: H01Q1/00
- IPC: H01Q1/00 ; H01Q1/38 ; H01Q21/00 ; H01Q1/24 ; H01L23/34 ; H01L23/66 ; H01L27/12 ; H01L29/786 ; H01Q21/06 ; G09G3/36

Abstract:
A TFT substrate (101) including a plurality of antenna element regions (U) arranged on a dielectric substrate (1), the TFT substrate including a transmitting/receiving region including a plurality of antenna element regions, and a non-transmitting/receiving region located outside of the transmitting/receiving region, each of the plurality of antenna element regions (U) including: a thin film transistor (10); a first insulating layer (11) covering the thin film transistor and having a first opening (CH1) which exposes a drain electrode (7D) of the thin film transistor (10); and a patch electrode (15) formed on the first insulating layer (11) and in the first opening (CH1), and electrically connected to the drain electrode (7D) of the thin film transistor, wherein the patch electrode (15) includes a metal layer, and a thickness of the metal layer is greater than a thickness of a source electrode (7S) and the drain electrode (7D) of the thin film transistor.
Public/Granted literature
- US20180337446A1 TFT SUBSTRATE, SCANNING ANTENNA USING SAME, AND METHOD FOR MANUFACTURING TFT SUBSTRATE Public/Granted day:2018-11-22
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