Invention Grant
- Patent Title: Transistor, liquid crystal display device, and manufacturing method thereof
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Application No.: US15284658Application Date: 2016-10-04
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Publication No.: US10170500B2Publication Date: 2019-01-01
- Inventor: Jun Koyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-203356 20100910
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; H01L27/12 ; G02F1/1362 ; H01L29/66 ; G02F1/1368 ; H01L29/24 ; H01L29/786 ; H01L29/417

Abstract:
Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring.
Public/Granted literature
- US20170025440A1 TRANSISTOR, LIQUID CRYSTAL DISPLAY DEVICE, AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-01-26
Information query
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