Invention Grant
- Patent Title: Structure to prevent lateral epitaxial growth in semiconductor devices
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Application No.: US15055571Application Date: 2016-02-27
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Publication No.: US10170482B2Publication Date: 2019-01-01
- Inventor: Balasubramanian Pranatharthiharan , Hui Zang
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Jeffrey S LaBaw; Steven J Meyers
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/11 ; H01L29/06 ; H01L27/088 ; H01L29/66 ; H01L21/84 ; H01L21/8234 ; H01L21/8238 ; H01L21/76 ; H01L21/762 ; H01L21/02 ; H01L21/3105 ; H01L21/311 ; H01L21/033 ; H01L21/308 ; H01L21/265
Abstract:
A method for preventing epitaxial growth in a semiconductor device is described. The method includes cutting the fins of FinFET structure to form a set of exposed fin ends. A set of sidewall spacers are formed on the set of exposed fin ends, forming a set of spacer covered fin ends. The set of sidewall spacers prevent epitaxial growth at the set of spacer covered fin ends. A semiconductor device includes a set of fin structures having a set of fin ends. A set of inhibitory layers are disposed at the set of fin ends to inhibit excessive epitaxial growth at the fin ends.
Public/Granted literature
- US20170162582A1 METHOD AND STRUCTURE TO PREVENT LATERAL EPITAXIAL GROWTH IN SEMICONDUCTOR DEVICES Public/Granted day:2017-06-08
Information query
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