Invention Grant
- Patent Title: Semiconductor device having buried metal line and fabrication method of the same
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Application No.: US15453963Application Date: 2017-03-09
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Publication No.: US10170413B2Publication Date: 2019-01-01
- Inventor: Tetsu Ohtou , Yusuke Oniki , Hidehiro Fujiwara
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/522 ; H01L23/532 ; H01L23/528 ; H01L27/092 ; H01L29/06 ; H01L21/8238 ; H01L29/66
Abstract:
A device is disclosed that includes a memory bit cell, a first word line, a pair of metal islands and a pair of connection metal lines. The first word line is disposed in a first metal layer and is electrically coupled to the memory bit cell. The pair of metal islands are disposed in the first metal layer at opposite sides of the word line and are electrically coupled to a power supply. The pair of connection metal lines are disposed in a second metal layer and are configured to electrically couple the metal islands to the memory bit cell respectively.
Public/Granted literature
- US20180151494A1 SEMICONDUCTOR DEVICE HAVING BURIED METAL LINE AND FABRICATION METHOD OF THE SAME Public/Granted day:2018-05-31
Information query
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