Invention Grant
- Patent Title: Multi-finger transistor and semiconductor device
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Application No.: US15526578Application Date: 2015-07-21
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Publication No.: US10170400B2Publication Date: 2019-01-01
- Inventor: Shohei Imai , Eigo Kuwata , Koji Yamanaka , Hiroaki Maehara , Akira Ohta
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2014-254176 20141216
- International Application: PCT/JP2015/070686 WO 20150721
- International Announcement: WO2016/098374 WO 20160623
- Main IPC: H01L23/482
- IPC: H01L23/482 ; H01L21/822 ; H01L27/04 ; H01L27/07 ; H01L29/417

Abstract:
A multi-finger transistor includes a circuit suppressing a variation in voltage current distribution. The circuit connects gate fingers (21) to each other, or source fingers (31) to each other in a region which is located outside an active region (11) and on a side where a drain pad (42) is disposed. The multi-finger transistor is configured to be linearly symmetric with respect to a direction of propagation of a signal from a gate pad (22) at the position of the gate pad (22).
Public/Granted literature
- US20170317012A1 MULTI-FINGER TRANSISTOR AND SEMICONDUCTOR DEVICE Public/Granted day:2017-11-02
Information query
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