Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US15851595Application Date: 2017-12-21
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Publication No.: US10170340B2Publication Date: 2019-01-01
- Inventor: Po Chun Lin
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW Taoyuan
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW Taoyuan
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/28
- IPC: H01L23/28 ; H01L23/31 ; H01L21/56
Abstract:
A semiconductor structure includes a substrate; a chip disposed over the substrate; and a molding disposed over the substrate and surrounding the chip at a molding temperature. The warpage of the substrate is convex or about zero at the molding temperature or 10° C. more or less than the molding temperature.
Public/Granted literature
- US20180122653A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2018-05-03
Information query
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