Invention Grant
- Patent Title: Spacer formation for self-aligned multi-patterning technique
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Application No.: US15708264Application Date: 2017-09-19
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Publication No.: US10170329B2Publication Date: 2019-01-01
- Inventor: Eric Chih-Fang Liu , Akiteru Ko
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood Herron & Evans LLP
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/311 ; H01L29/66 ; H01L21/02
Abstract:
Embodiments of systems and methods for spacer formation for SAMP techniques are described. In an embodiment a method includes providing a substrate with a spacer having a conformal coating. The method may also include performing a spacer freeze treatment process. Additionally, the method may include performing an etch and clean process on the substrate. Further, the method may include controlling the spacer treatment process and etch and clean process in order to achieve spacer formation objectives.
Public/Granted literature
- US20180082851A1 SPACER FORMATION FOR SELF-ALIGNED MULTI-PATTERNING TECHNIQUE Public/Granted day:2018-03-22
Information query
IPC分类:
